PART |
Description |
Maker |
NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY STANDOFF HEX 6-32THR 2.5L ALUM TVS, 6.5CA, BI, 6.5V, 400W, SMT 3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭 3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭 3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭 TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp. Intel, Corp.
|
BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
RD28F3208C3T70 RD28F3208C3B90 |
TVS BIDIRECT 400W 90V SMA 3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye SPECIALTY MEMORY CIRCUIT, PBGA66
|
INTEL CORP Intel, Corp.
|
P82C202A |
Advanced Memory Controller
|
Chips
|
NCP51198 |
DDR Memory Termination Regulator
|
ON Semiconductor
|
SE97B |
DDR memory module temp sensor
|
NXP Semiconductors
|
SE98A |
DDR Memory Module Temp Sensor
|
Philips Semiconductors
|
TBOX313-835-FL-16 |
High performance DDR-1333 4 GB memory onboard
|
Axiomtek Co., Ltd.
|
EV20073DH-00A |
2A, 1.30V ?6.0V DDR Memory VTT Termination Regulator
|
Monolithic Power System...
|
TE28F004B3B110 TE28F004B3B90 TE28F004B3T110 TE28F0 |
3 Volt Advanced Boot Block Flash Memory
|
INTEL[Intel Corporation]
|